Electroluminescence enhancement of (112?2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

摘要

(1122) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1° to +1°. While the coexistence of (1122) surface and inclined {1011} surfaces was observed on GaN films on the on-axis m-plane sapphire substrates, {1011} surfaces were dominant on the GaN films on the +1° miscut sapphire substrates. As the miscut angle was changed from -1° to +1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.