Semipolar III-nitride optoelectronic device on M-plane substrate with miscut less than +/− 15 degrees in C direction

摘要

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where 15x1 and 1x15 degrees.