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Magnetism by Interfacial Hybridization and p-type Doping of MoS2 in Fe4N/MoS2 Superlattices: A First-Principles Study

机译:Fe4N / MoS2超晶格中MoS2的界面杂化和p型掺杂引起的磁性:第一性原理研究

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摘要

Magnetic and electronic properties of Fe4N(111)/ MoS2(√3 X √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe~IFe~(II)—S and (II) N—S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe~I/Fe~(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μ_B for Mo located on top of Fe1. For modelII, no magnetism is induced due to weak N—S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√ 3 X √ 3) superlattices.
机译:通过第一性原理计算,考虑以下两种模型,研究了Fe4N(111)/ MoS2(√3X√3)超晶格的磁性和电子性质:接口,每个接口具有六个堆叠配置。在模型I中,Fe〜I / Fe〜(II)与S之间的强界面杂化导致单层MoS2的磁性,而位于Fe1上方的Mo的磁矩为0.33μB。对于模型II,由于弱的NS界面键合而不会感应出磁性,并且保留了单层MoS2的半导体性质。 MoS2和N之间的电荷转移导致p型MoS2的肖特基势垒高度为0.5-0.6 eV。我们的结果表明,界面几何结构和杂化可用于调节Fe4N(111)/ MoS2(√3 X√3)超晶格中的磁性和掺杂。

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