IN SITU DOPING OF IRONS INTO MOS2 TOWARD TWO-DIMENSIONAL DILUTE MAGNETIC SEMICONDUCTORS

摘要

A method for producing doped, van der Walls ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors, as high curie temperatures are achieved (i.e., those exceeding room temperature), which allows for the preservation of useful ferromagnetic and semiconducting properties across a wider range of conditions.