机译:通过重复暴露于单次消融阈值的杂散暴露于飞秒XUV脉冲诱导的薄钌膜中的损伤积累
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
DESY Notkestr 85 D-22607 Hamburg Germany;
Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;
ASML Netherlands BV POB 324 NL-5500 AH Veldhoven Netherlands;
Phys Tech Bundesanstalt Abbestr 2-12 D-10587 Berlin Germany;
Helmholtz Zentrum Berlin Mat &
Energie Albert Einstein Str 15 D-12489 Berlin Germany;
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;
Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;
Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;
Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;
Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;
Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;
Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;
DESY Notkestr 85 D-22607 Hamburg Germany;
DESY Notkestr 85 D-22607 Hamburg Germany;
DESY Notkestr 85 D-22607 Hamburg Germany;
DESY Notkestr 85 D-22607 Hamburg Germany;
DESY Notkestr 85 D-22607 Hamburg Germany;
DESY Notkestr 85 D-22607 Hamburg Germany;
Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;
Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;
ASML Netherlands BV POB 324 NL-5500 AH Veldhoven Netherlands;
Laser Lab Gottingen eV Hans Adolf Krebs Weg 1 D-37077 Gottingen Germany;
Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;
机译:通过重复暴露于单次消融阈值的杂散暴露于飞秒XUV脉冲诱导的薄钌膜中的损伤积累
机译:紫外飞秒激光脉冲对铬的单次烧蚀阈值
机译:激光诱发的视网膜损伤阈值,适用于重复脉冲暴露于100μs脉冲
机译:单次射击飞秒激光诱导的损伤和基于HFO_2 / SIO_2的光学薄膜的消融:几循环脉冲和110 fs脉冲之间的比较
机译:使用皮秒激光脉冲对铝薄膜进行激光诱导的反烧蚀。
机译:低流量小飞秒激光脉冲诱导等离子体近场消融硅基氧化膜周期纳米结构的制备
机译:飞秒XUV脉冲以1 MHz重复频率辐照的硅在多次冲击中的蓄热作用
机译:激光诱导的视网膜损伤阈值,重复脉冲暴露于100微秒脉冲。