首页> 外文期刊>Journal of the Optical Society of America, B. Optical Physics >Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation threshold
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Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation threshold

机译:通过重复暴露于单次消融阈值的杂散暴露于飞秒XUV脉冲诱导的薄钌膜中的损伤积累

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摘要

The process of damage accumulation in thin ruthenium films exposed to multiple femtosecond extreme ultraviolet (XUV) free-electron laser (FEL) pulses below the critical angle of reflectance at the FEL facility in Hamburg (FLASH) was experimentally analyzed. The multi-shot damage threshold is found to be lower than the single-shot damage threshold. Detailed analysis of the damage morphology and its dependence on irradiation conditions justifies the assumption that cavitation induced by the FEL pulse is the prime mechanism responsible for multi-shot damage in optical coatings. (C) 2018 Optical Society of America.
机译:实验分析了在汉堡(Flash)的FEL设施下的临界反射率以下的多毫升极紫外(XUV)自由电子激光器(FEL)脉冲中暴露于多毫升极紫外(XUV)的临界反射角的损伤过程。 发现多拍损伤阈值低于单次损伤阈值。 对损伤形态及其对照射条件的依赖性的详细分析证明了Fel脉冲引起的空化的假设是负责光学涂层中多次损坏的主要机制。 (c)2018年光学学会。

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    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;

    ASML Netherlands BV POB 324 NL-5500 AH Veldhoven Netherlands;

    Phys Tech Bundesanstalt Abbestr 2-12 D-10587 Berlin Germany;

    Helmholtz Zentrum Berlin Mat &

    Energie Albert Einstein Str 15 D-12489 Berlin Germany;

    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;

    Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;

    Univ Twente MESA NanoLab Achterhorst 75 NL-7522 EA Enschede Netherlands;

    Univ Twente MESA Inst Nanotechnol Ind Focus Grp XUV Opt Drieneriolaan 5 NL-7522 NB Enschede Netherlands;

    Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;

    Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;

    Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;

    Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    Acad Sci Czech Republ Inst Phys Slovance 2 Prague 18221 8 Czech Republic;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    DESY Notkestr 85 D-22607 Hamburg Germany;

    Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;

    Carl Zeiss SMT GmbH Rudolf Eber Str 2 D-73447 Oberkochen Germany;

    ASML Netherlands BV POB 324 NL-5500 AH Veldhoven Netherlands;

    Laser Lab Gottingen eV Hans Adolf Krebs Weg 1 D-37077 Gottingen Germany;

    Polish Acad Sci Inst Phys Lotnikow 32-46 PL-02668 Warsaw Poland;

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  • 正文语种 eng
  • 中图分类 光学;
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