As an addition material in order to dope the pulse laser ablation accumulation which produces the thin film of the target material on the substrate where it irradiates the thin film null

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing a crystal thin film of a p-type semiconductor of a gallium nitride by the dual pulsed laser vapor deposition procedure under an ammonia or nitrogen-radical atmosphere, and to provide a thin film prepared by the method.;SOLUTION: The preparing method of the thin film that prepares an epitaxial (single crystal) thin film of a p-type semiconducted Ga type group III nitride or the crystalline thin film on a substrate is characterized by performing the dual pulsed laser vapor deposition (dual PLAD) procedure using a target of a Ga type group III metal, a Ga type group III metal nitride or a mixture thereof as a film material and a target of a divalent metal or a nitride of a divalent metal as a dopant material for hole doping and alternately or simultaneously ablating these, or ablating the mixed target of both the film material and the added material with the pulsed laser ablation deposition means in the ammonia or nitrogen-radical atmosphere. The thin film is also provided by using the method.;COPYRIGHT: (C)2005,JPO&NCIPI