...
首页> 外文期刊>Journal of the Korean Physical Society >Dimethyl Ketone Treatment of Cross-linked Poly(4-vinylphenol) Insulators for Pentacene Thin-film Transistors
【24h】

Dimethyl Ketone Treatment of Cross-linked Poly(4-vinylphenol) Insulators for Pentacene Thin-film Transistors

机译:五烯薄膜晶体管交联聚(4-乙烯基酚)绝缘子的二甲基酮处理

获取原文
获取原文并翻译 | 示例
           

摘要

We demonstrate a dimethyl ketone treatment to produce a hydrophobic surface of cross-linked poly(4-vinylphenol) (c-PVP) insulators for pentacene thin-film transistors (TFTs). Through water contact angle measurements, the dimethyl ketone treatment is proven to significantly increase the surface hydrophobicity of c-PVP films. The results of X-ray diffraction analyses indicate that the dimethyl ketone-treated c-PVP insulator contributes to enhancing the crystallinity of pentacene films and reducing the density of lamellar grains and bulk phase crystallites in pentacene films. In addition, the growth of lamellar grains is elucidated by examining the initial growths of the pentacene films on the c-PVP films with different surface energies. Consequently, the enhancement in the performance of pentacene TFTs is achieved by incorporating the dimethyl ketone-treated c-PVP films as gate insulators.
机译:我们证明了一种二甲基酮处理,以制备用于五烯薄膜晶体管(TFT)的交联聚(4-乙烯基酚)(C-PVP)绝缘体的疏水表面。 通过水接触角测量,证明了二甲基酮处理以显着增加C-PVP薄膜的表面疏水性。 X射线衍射分析的结果表明二甲基酮处理的C-PVP绝缘体有助于增强五苯膜的结晶度并降低五苯膜中的层状晶粒密度和散装相结晶的密度。 此外,通过在具有不同表面能的C-PVP膜上的初始生长来阐明层胶晶粒的生长。 因此,通过将二甲基酮处理的C-PVP薄膜掺入栅极绝缘体来实现五烯TFT性能的增强。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号