Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h

摘要

GaN-based continuous-wave operated blue-violet laser diodes (LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm~2 ridge waveguide structure. The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature (25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively. In addition, the threshold current density and voltage are as small as 1.46 kA/cm~2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.