A new small-signal model for asymmetrical AIGaN/GaN HEMTs

摘要

A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is pro-posed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component's physical meaning.