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Resonant and non-resonant coupling of one-dimensional microcavity mode and optical Tamm state

机译:一维微腔模式和光学TAMM状态的共振和非谐振耦合

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Coupling between the optical Tamm states (OTS) and microcavity mode in one-dimensional photonic crystal (1DPhC) structures is investigated experimentally and numerically with the help of transfer matrix method in resonant and non-resonant conditions, as a function of the distance between the 1DPhC-metal interface and the cavity layer (in terms of number of bilayers, N-top, between the Tamm cavity and the microcavity). The system under study comprised of twelve bi-layers of alternating SiO2/TiO2 thin films, a half-wave thick TiO2 microcavity region and a layer of silver metal on top of the structure. It is observed that the microcavity mode and the OTS repel each other when N-top is reduced indicating strong coupling between the two modes. In the resonant condition, wherein the individual structure consisting of either microcavity alone or Tamm cavity alone are tuned for the configuration N-top = 2, the coupled modes in the hybrid structures are simultaneously localized at metal-1DPhC interface and at the microcavity. In the non-resonant condition when the microcavity mode and the OTS in the individual structure are not tuned, the coupling between the modes for the hybrid structure with N-top = 2 leads to an enhanced electric field intensity of the microcavity mode compared to that from the uncoupled microcavity mode. Consequently, four different configurations corresponding to the non-resonant condition, having different N-top are studied experimentally. The last four TiO2 layers and the microcavity layer of all the fabricated samples were incorporated with carbon quantum dots (CQDs). Comparison of photoluminescence enhancement as a function of N-top in coupled and uncoupled conditions is discussed.
机译:通过在谐振和非谐振条件下,通过在谐振和非谐振条件下通过转移矩阵法实验和数值来研究光学TAMM状态(OTS)和微腔模式之间的耦合和在一维光子晶体(1dphc)结构中的耦合。 1dphc-金属界面和腔层(根据双层数量,在TAMM腔和微腔之间的双层)。正在研究的系统由12个双层交替的SiO 2 / TiO 2薄膜,半波厚TiO 2微腔区域和结构顶部的银金属层组成。观察到,当N-TOP减小时,微腔模式和彼此互相排斥,指示两种模式之间的强耦合。在共振条件中,其中单独组成的单独组成的单独结构或单独的Tamm腔组成的各个结构被调整为配置N-TOP = 2,混合结构中的耦合模式同时在金属-1dphc接口和微腔处定位。在未调整单个结构中的微腔模式和OTS时的非谐振条件中,与N-TOP = 2的混合结构模式之间的耦合导致微腔模式的增强电场强度与此相比从解耦的微腔模式。因此,通过实验研究了与具有不同N-Top的非共振条件相对应的四种不同的配置。最后四个TiO2层和所有制造样品的微腔层掺入碳量子点(CQD)。讨论了光致发光的比较作为耦合和解耦条件的N-TOP的函数。

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