SURFACE MICROMACHINING TECHNOLOGY APPLIED TO THE FABRICATION OF A FET PRESSURE SENSOR

摘要

This paper presents a novel surface-micromachined pressure sensor based in a FET device. The diaphragm acts as the gate of the transistor and the gate-source voltage varies in a nearly linear form with pressure when keeping constant the current along the channel. Both theoretical characteristics and the technological process are analysed. Finally the advantages over existing microsensors are examined. [References: 7]