A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

摘要

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between -3 V to 3 V) and high off-state breakdown voltage (620 V @ V-G = -10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.