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Rational molecular design for isoindigo-based polymer semiconductors with high ductility and high electrical performance

机译:具有高延展性和高电工性能的isoindigo基聚合物半导体的合理分子设计

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摘要

Achieving good electrical properties and ductility of polymer semiconductors has always been challenging. In this work, a series of isoindigo derivative-based conjugated polymers was studied in an effort to gain a better understanding of the influence of polymer main and side chain structures on their electrical and mechanical properties. The results suggested that the introduction of alkyl side chains onto the donors can significantly enhance the mechanical properties of isoindigo-based polymers; however, the electrical properties of the films greatly deteriorated due to the large steric hindrance by the chain. The insertion of strong electron-withdrawing units, such as benzodifurandione, into the isoindigo chain during the synthesis of a bis(2-oxoindolin-3-ylidene)-benzodifuran-dione (BIBDF)-based polymer (PBIBDF-BT) significantly boosted the electrical properties of the films without decreasing their mechanical properties. The crack onset in PBIBDF-BT thin films was observed at 50% tensile strain. In addition, PBIBDF-BT thin films exhibited bipolar transport properties with both electron and hole mobilities greater than 0.1 cm(2) V-1 s(-1) at 100% strain. It is found that the improvement of PBIBDF-BT performance is attributed to its proper molecular structure. The long alkyl side chains significantly increase the ductility of PBIBDF-BT thin films, and the strong electron-withdrawing BIBDF unit in the main chains enhances the local aggregation, resulting in a significant increase in mobility. These results indicate that the mechanical and electrical properties of conjugated polymers could simultaneously be improved through reasonable molecular design.
机译:实现良好的电性能和聚合物半导体的延展性一直在具有挑战性。在这项工作中,研究了一系列isoindigo衍生物的共轭聚合物,以便更好地了解聚合物主链结构对其电气和机械性能的影响。结果表明,将烷基侧链引入供体上可以显着增强甲烯靛蓝的聚合物的机械性能;然而,由于链条的大空间障碍,薄膜的电性能大大恶化。在合成双(2-氧代吲哚键-3-少烯) - 基于Benzodifuran-dione(Bibdf)的聚合物(PBIBDF-BT)的合成期间,将强电子抽出单元(如苯并二呋喃)(如苯并二呋喃)链中的胰岛吲哚链条插入薄膜的电性能而不降低其机械性能。在50%拉伸应变下观察到PBIBDF-BT薄膜的裂纹发作。此外,PBIBDF-BT薄膜表现出双极传输性能,其电子和空穴迁移率大于0.1cm(2)V-1s(-1),在100%菌株下。结果发现,PBIBDF-BT性能的改善归因于其适当的分子结构。长烷基侧链显着增加了PBIBDF-BT薄膜的延展性,主链中的强电子抽出的BiBDF单元增强了局部聚集,导致迁移率显着增加。这些结果表明,通过合理的分子设计可以同时提高缀合聚合物的机械和电性能。

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    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Pohang Univ Sci &

    Technol Dept Chem Engn Pohang 790784 South Korea;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Natl Engn Lab Special Display Technol State Key Lab Adv Display Technol Acad Optoelect Technol Hefei 230009 Anhui Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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