Performance Analysis of Electrical Characteristics for Short Channel Effects (SCE) in Carbon Nano Tube Field Effect Transistor (CNTFET) Devices

摘要

This study presents the study of electrical characteristics performance of Carbon Nanotube Field Effect Transistor (CNTFET) devices in terms of modulated channel potential, surface potential, threshold voltage, threshold voltage roll-off and Drain Induced Barrier Voltage (DIBL) effect. From the study, it is evident that the modulated channel potential generally falls with drain voltage. The fall becomes steeper for higher intrinsic carrier concentration. Surface potential is suppressed with the channel for larger oxide thickness. Threshold voltage rises sharply when the channel length reduces below 6 nm whereas threshold voltage roll-off is severe for lower oxide thickness. DIBL effect is more predominant for nano-scale devices and becomes severe for larger oxide thickness due to poor coupling between the channel and the gate.