首页>
外国专利>
Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
展开▼
展开▼
页面导航
摘要
著录项
相似文献
摘要
Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field effect transistors comprising a source, a drain, a channel region, and a gate, wherein the first channel region includes a fabric of semiconducting nanotubes of a given conductivity type. Such FETs can be arranged to provide inverter circuits in either two-dimension or three-dimensional (stacked) layouts. Design equations based upon consideration of the electrical characteristics of the nanotubes are described which permit optimization of circuit design layout based upon constants that are indicative of the current carrying capacity of the nanotube fabrics of different FETs.
展开▼