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首页> 外文期刊>Journal of electroceramics >RHEED intensity oscillations for the stoichiometric growth of SrTiO{sub}3 thin films by reactive molecular beam epitaxy
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RHEED intensity oscillations for the stoichiometric growth of SrTiO{sub}3 thin films by reactive molecular beam epitaxy

机译:通过反应分子束外延的SRTIO {Sub} 3薄膜的化学计量生长的Rheed强度振荡

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摘要

The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control. We report the use of/u situ reflection high-energy electron diffraction (RHEED) for the Stoichiometric deposition of SrTiO{sub}3 (100) from independent strontium and titanium sources. By monitoring changes in the RHEED intensity oscillations as monolayer doses of strontium and titanium are sequentially deposited, the Sr:Ti ratio can be adjusted to within 1% of stoichiometry. Furthermore, the presence of a beat frequency in the intensity oscillation envelope allows the adjustment of the strontium and titanium fluxes so that a full monolayer of coverage is obtained with each shuttered dose of strontium or titanium. RHEED oscillations have also been employed to determine the doping concentration in barium- and lanthanum-doped SrTiO{sub}3 films.
机译:通过反应性分子束外延(MBE)的高质量多组分氧化物薄膜的生长需要精确的组成对照。 我们报告使用/ U原位反射高能电子衍射(RHEED)从独立锶和钛源的SRTIO {Sub} 3(100)的化学计量沉积。 通过依次沉积单层剂量的单层剂量和钛的单层剂量,SR:Ti比可以将其调节至化学计量的1%内。 此外,强度振荡壳中的节拍频率的存在允许调节锶和钛通量,从而通过各个螺纹锶或钛获得全单层覆盖物。 还采用Rheed振荡来确定钡和镧掺杂SRTIO {Sub} 3膜中的掺杂浓度。

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