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Super Resolution Surface Plasmon Nanolithography with Larger Period Mask by Oblique Illuminations

机译:超分辨率表面等离子体纳米型纳米型斜面掩模通过倾斜照明

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摘要

A super resolution surface plasmon nanolithography with a dielectric-metal multilayers metamaterial structure and larger period mask by oblique illuminations is presented in this paper. Compared to the normal illumination case, a larger period mask can be used to generate the super resolution interference lithography patterns with the same dimensions by the aid of horizontal direction momentum components of the working wavelength. The relationship of the illumination angle and the mask's period is also discussed. As an example, we numerically demonstrate that pattern with half pitch down to 18 nm can be obtained by a 216 nm period mask under 193 nm light oblique illuminations.
机译:本文介绍了一种具有介质多层超材料结构和较大时段掩模的超分辨率表面等离子体纳米光刻通过倾斜照明。 与正常的照明盒相比,较大的时段掩模可用于通过工作波长的水平方向动量分量产生具有相同尺寸的超分辨率干扰光刻图案。 还讨论了照明角和面罩的关系。 作为示例,我们在数值上证明,通过在193nm浅倾斜照明下的216nm周期掩模中可以获得半间距下降至18nm的图案。

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