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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Deep subwavelength nanolithography using localized surface plasmon modes on planar silver mask
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Deep subwavelength nanolithography using localized surface plasmon modes on planar silver mask

机译:在平面银掩模上使用局部表面等离子体激元模式的深亚波长纳米光刻

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摘要

The development of a near-field optical lithography is presented in this paper. By accessing short modal wavelengths of localized surface plasmon modes on a planar metallic mask, the resolution can be significantly increased while using conventional UV light source. Taking into account the real material properties, numerical studies indicate that the ultimate lithographic resolution at 20 nm is achievable through a silver mask by using 365 nm wavelength light. The surface quality of the silver mask is improved by adding an adhesion layer of titanium during the mask fabrication. Using a two-dimensional hole array silver mask, we experimentally demonstrated nanolithography with half-pitch resolution down to 60 nm, far beyond the resolution limit of conventional lithography using I-line (365 nm) wavelength.
机译:本文介绍了近场光刻技术的发展。通过访问平面金属掩模上局部表面等离子体激元模式的短模态波长,可以在使用常规UV光源时显着提高分辨率。考虑到实际的材料特性,数值研究表明,通过使用365 nm波长的光通过银掩模可以获得20 nm的最终光刻分辨率。通过在掩模制造期间添加钛的粘附层来改善银掩模的表面质量。使用二维孔阵列银掩模,我们通过实验演示了半间距分辨率低至60 nm的纳米光刻技术,远远超出了使用I线(365 nm)波长的传统光刻技术的分辨率极限。

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