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首页> 外文期刊>Journal of chemical information and modeling >Modeling the Field Emission Enhancement Factor for Capped Carbon Nanotubes Using the Induced Electron Density
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Modeling the Field Emission Enhancement Factor for Capped Carbon Nanotubes Using the Induced Electron Density

机译:利用诱导电子密度对封端碳纳米管的场发射增强因子进行建模

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In many field electron emission experiments on single -walled carbon nanotubes (SWCNTs), the SWCNT stands on one of two well separated parallel plane plates, with a macroscopic field FM applied between them. For any given location "L" on the SWCNT surface, a field enhancement factor (FEF) is defined as F-L/F-M, where F-L is a local field defined at "L". The best emission measurements from small -radii capped SWCNTs exhibit characteristic FEFs that are constant (i.e., independent of F-M). This paper discusses how to retrieve this result in quantum -mechanical (as opposed to classical electrostatic) calculations. Density functional theory (DFT) is used to analyze the properties of two short, floating SWCNTs, capped at both ends, namely, a (6,6) and a (10,0) structure. Both have effectively the same height (similar to 5.46 nm) and radius (similar to 0.42 nm). It is found that apex values of local induced FEF are similar for the two SWCNTs, are independent of F-M, and are similar to FEF values found from classical conductor models. It is suggested that these induced-FEF values are related to the SWCNT longitudinal system polarizabilities, which are presumed similar. The DFT calculations also generate "real", as opposed to "induced", potential-energy (PE) barriers for the two SWCNTs, for Fm values from 3 V/mu m to 2 V/nm. PE profiles along the SWCNT axis and along a parallel "observation line" through one of the topmost atoms are similar. At low macroscopic fields, the details of barrier shape differ for the two SWCNT types. Even for F-M = 0, there are distinct PE structures present at the emitter apex (different for the two SWCNTs); this suggests the presence of structure -specific chemically induced charge transfers and related patch-field distributions.
机译:在单晶碳纳米管(SWCNTS)上的许多场电子发射实验中,SWCNT位于两个阱间平行平板中的一个中,在它们之间施加宏观场FM。对于SWCNT表面上的任何给定位置“L”,场增强因子(FEF)被定义为F-L / F-M,其中F-L是在“L”定义的本地字段。来自小-Radii封端的SWCNT的最佳排放测量表现出具有恒定的特征FEF(即,独立于F-M)。本文讨论了如何在量子 - 机械(与经典静电)计算中检索这一结果。密度函数理论(DFT)用于分析两个短,浮动SWCNT的性质,封装在两端,即(6,6)和A(10,0)结构。两者都有效地相同的高度(类似于5.46nm)和半径(类似于0.42nm)。发现局部诱导FEF的顶点值对于两个SWCNT类似,与F-M无关,并且类似于从经典导体模型中发现的FEF值。建议这些诱导FEF值与SWCNT纵向系统偏振有关,这被推测相似。 DFT计算也会产生“真实”,而不是“诱导的”,两个SWCNT的潜在能量(PE)屏障,用于从3V / mu m到2 v / nm的fm值。沿SWCNT轴的PE剖视图通过最顶层原子之一沿着并联“观察线”是相似的。在低宏观领域,两个SWCNT类型的屏障形状的细节不同。即使对于F-M = 0,也存在在发射器顶点(两个SWCNTS的不同)处存在不同的PE结构;这表明存在结构 - 特异性化学诱导的电荷转移和相关斑块场分布。

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