A Giant Increase in the Electrical Conductivity of the High-Resistivity Film MoS 2 Semiconductor under Continuous Proton Injection

摘要

The highly reproducible effect of a giant (10?000-fold) increase in the electrical conductivity of a film sample of a high-resistivity MoS~(2)semiconductor with a layered structure under continuous proton injection in dynamic equilibrium conditions is reported for the first time. The effect disappears when the process of proton injection is interrupted. The potential to control the composition and the properties of materials by doping them with charge carriers of different signs, masses, and energies (as a complement to traditional chemical doping) is noted.