机译:氟化石墨烯绝缘子对AlGaN / GaN MIS-HEMTS作为栅极电介质的影响
Nanjing Univ Sci &
Technol Sch Mat Sci &
Engn Nanjing 210094 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Nanjing Univ Sci &
Technol Sch Mat Sci &
Engn Nanjing 210094 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Chinese Acad Sci Int Lab Adapt Bionanotechnol Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Nanjing Univ Sci &
Technol Sch Mat Sci &
Engn Nanjing 210094 Peoples R China;
Chinese Acad Sci Key Lab Multifunct Nanomat &
Smart Syst Suzhou Inst Nanotech &
Nanobion Suzhou 215123 Peoples R China;
Fluorinated graphene; AlGaN/GaN; Interface-state density; High electron mobility transistors; Two-dimensional materials;
机译:氟化石墨烯绝缘子对AlGaN / GaN MIS-HEMTS作为栅极电介质的影响
机译:氟化栅电介质AlGaN / GaN MIS-HEMT的特性
机译:以氟化Al2O3为栅极电介质的AlGaN / GaN金属绝缘体半导体高电子迁移率晶体管的阈值电压调制机制
机译:在AlGaN / GaN凹栅D型MIS-HEMT和E型MIS-FET上对PE-ALD SiN栅极电介质进行时变电介质击穿(TDDB)评估
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:AlGaN / GaN MIS-HEMT与PECVD SINX,SION,SIO2作为栅极电介质和钝化层
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制