Investigation of high transparent and conductivity of IGZO/Ag/IGZO sandwich structures deposited by sputtering method

摘要

Indium gallium zinc oxide/silver/indium gallium zinc oxide (IGZO/Ag/IGZO) triple-layer films were deposited on glass substrates using radio frequency (R.F.) magnetron sputtering. We had found that the deposition time (thickness) of Ag had a large effect on the electrical (conductive) and transmittance characteristics of the IGZO/Ag/IGZO triple-layer films. As the SIMS depth profile analysis was conducted on the IGZO/Ag/IGZO triple-layer films, as expected, the thickness of the Ag layer increased with the increase of deposition time. In the visible wavelength region, as the deposition time of Ag layer increased from 10 s to 30 s, the all IGZO/Ag/IGZO triple layer films revealed the amorphous phase. As the deposition time of Ag layer increased, the maximum transmittance ratio slightly decreased and the wavelength to reveal the maximum transmittance ratio was shifted to lower value. Also, the mobility and carrier concentration increased and the resistivity decreased with increasing deposition times of Ag layer. The triple-layer IGZO/Ag/IGZO films showed impressive transmittance and electrical conductivity and the IGZO/Ag/IGZO triple-layer films with the 25 s Ag deposition time possessed satisfactory optical and electrical properties for potential applications.