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IGZO/Ag/IGZO Transparent electrode with IGZO/Ag/IGZO multilayered structure and method for preparing the same
IGZO/Ag/IGZO Transparent electrode with IGZO/Ag/IGZO multilayered structure and method for preparing the same
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机译:IGZO / Ag / IGZO多层结构的IGZO / Ag / IGZO透明电极及其制备方法
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摘要
The present invention relates to a flexible transparent electrode having an IGZO / Ag / IGZO multilayer thin film structure, and more particularly, to a flexible transparent electrode having an Ag metal layer; And an IGZO layer-containing flexible transparent electrode laminated on the upper and lower surfaces of the Ag metal layer, wherein the Ag metal layer has a thickness of 11 nm to 25 nm and the IGZO layer has a thickness of 13 nm to 70 nm. To a transparent electrode.According to the present invention, it is possible to provide a flexible transparent electrode having a high transparency comparable to that of the conventional ITO electrode, having a low sheet resistance, being manufactured by a room temperature deposition process, is.
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机译:具有IGZO / Ag / IGZO多层薄膜结构的柔性透明电极技术领域本发明涉及一种具有IGZO / Ag / IGZO多层薄膜结构的柔性透明电极,尤其涉及一种具有Ag金属层的柔性透明电极。并且,在Ag金属层的上表面和下表面层叠有包含IGZO层的柔性透明电极,其中,Ag金属层的厚度为11nm至25nm,IGZO层的厚度为13nm至70nm。对于透明电极。根据本发明,可以提供通过室温沉积工艺制造的,具有与传统ITO电极相当的高透明性,具有低薄层电阻的柔性透明电极。
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