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机译:PECVD沉积沉积氢化非晶硅硬掩墩膜的等离子体功率的影响
Sungkyunkwan Univ Dept Phys Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Phys Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Phys Suwon 16419 South Korea;
Sejong Univ Hybrid Mat Res Ctr Seoul 143747 South Korea;
TES Co Ltd Adv Res Lab Gyeonggi Do 449825 South Korea;
TES Co Ltd Adv Res Lab Gyeonggi Do 449825 South Korea;
Sungkyunkwan Univ Dept Phys Suwon 16419 South Korea;
Sejong Univ Hybrid Mat Res Ctr Seoul 143747 South Korea;
Hardmask; Hydrogenated amorphous silicon carbide; Plasma enhanced chemical vapor deposition;
机译:PECVD沉积沉积氢化非晶硅硬掩墩膜的等离子体功率的影响
机译:碳含量和等离子体功率对PECVD沉积氢化非晶碳化硅薄膜室温光致发光特性的影响
机译:PECVD沉积的氢化非晶碳化硅薄膜的结构与性能
机译:PECVD技术对光伏应用沉积的氢化非晶碳化硅的钝化性质
机译:PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
机译:通过PECVD在镍金属化多孔硅上沉积的非晶硅薄膜的结晶
机译:PECVD技术沉积的氢化非晶碳化硅在光伏领域的钝化性能
机译:硅烷等离子体沉积非晶氢化硅的体积和表面性质模拟