Comparison of linear transformations for deriving kinetic constants during silicon etching in Cl-2 environment

摘要

The chemical etching of n-type polycrystalline silicon films in Cl-2 environment at three different temperatures is investigated. The experimental dependences of silicon etching rate on pressure of Cl-2 molecules are described using the Michaelis-Menten equation. The experimental data are presented using Lineweaver-Burk, Hanes-Woolf, and Eadie-Hofstee plots. The linear transformations are used to derive reaction rate constants, desorption rate constants, and Michaelis constants. True values of the kinetic constants are determined using Michaelis-Menten saturation curves. The linear transformations are compared using mean absolute percentage errors (MAPEs) of the kinetic constants. It is found that the Hanes-Woolf plot provides the most accurate values of the kinetic constants.