机译:SiC / SiO2 / Al和SiC / Ni / Al界面行为的研究
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Coll Southwest Petr Univ Mat Sci &
Engn Chengdu 610500 Sichuan Peoples R China;
Chongqing Univ Sci &
Technol Met &
Mat Engn 20 Univ East Rd Chongqing 401331 Peoples R China;
Surface modification; Interface structure; SiC; Al composite; High-temperature oxidation; Electroless nickel plating;
机译:SiC / SiO2 / Al和SiC / Ni / Al界面行为的研究
机译:研究退火工艺和界面与四乙氧基硅烷沉积的SiO2对降低4H-SiC器件栅极定义的热收支的影响
机译:纯氮气中后氧化退火对SiO2 / 4H-SiC界面氮化的研究
机译:平面SiC MOSFET的SIC / SIO2接口陷阱分布的TCAD模型校准
机译:具有溶胶-凝胶衍生的氧化物界面涂层的Nicalon / SiC和Nextel / SiC复合材料的加工和力学行为。
机译:Ni / Al2O3Ni / SiCNi / ZrO2和Ni /石墨烯纳米复合涂层的腐蚀行为分析和建模
机译:4H-siC / siO2界面缺陷的微观结构和电学活性:氧化多孔siC的EpR研究