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Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects: an EPR study of oxidized porous SiC

机译：4H-siC / siO2界面缺陷的微观结构和电学活性：氧化多孔siC的EpR研究

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1. Identification of the Carbon Dangling Bond Center at the 4H-SiC/SiO_2 Interface by an EPR Study in Oxidized Porous SiC [J] . J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Physical review letters . 2004,第1期

机译：通过EPR研究氧化多孔SiC中的4H-SiC / SiO_2界面碳悬空键中心。
2. Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation [J] . Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, AIP Advances . 2019,第10期

机译：干湿氧化制备SiO2 / 4H-SiC电性能与界面结构的关系
3. First-Principles Study on Interlayer States at the 4H-SiC/SiO2 Interface and the Effect of Oxygen-Related Defects [J] . Kirkham Christopher James, Ono Tomoya Journal of the Physical Society of Japan . 2016,第2期

机译：第一性原理研究4H-SiC / SiO2界面上的层间状态以及氧相关缺陷的影响
4. Microscopic Structure and Electrical Activity of 4H-SiC/SiO_2 Interface Defects : an EPR study of oxidized porous SiC [C] . H.J. von Bardeleben, J.LCantin, Y.Shishkin, International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：4H-SiC / SiO_2界面缺陷的微观结构和电活性：氧化多孔SiC的EPR研究
5. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
6. A look underneath the SiO2/4H-SiC interface after N2O thermal treatments [O] . Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, 2013

机译：N2O热处理后SiO2 / 4H-SiC界面的外观
7. Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: a Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-type 4H-SiC [O] . H. J. Von Bardeleben, J. L. Cantin, I. C. Vickridge, 2015

机译：通过高温NO处理修改氧化物/半导体界面：氧化多孔和块状n型4H-siC的EpR，NRa和Xps组合研究

Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects: an EPR study of oxidized porous SiC

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