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Memory-function conductivity formula and transport coefficients in underdoped cuprates

机译:内存函数电导率公式和输送系数在底铜替代物中

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The two-band memory-function conductivity formula is derived from the quantum kinetic equation in the pseudogap state of underdoped cuprates. The conduction electrons are described by using the adiabatic version of the nested Fermi liquid model, and the effects of Mott correlations are taken into account phenomenologically. The linear dependence of the low-temperature effective number of conduction electrons on the doping level delta (for not too large delta) is found to be in agreement with experimental observation. The momentum distribution function turns out to play an important role in describing temperature effects. The closing of the antiferromagnetic pseudogap at temperatures of the order of room temperature is shown to be a direct consequence of a relatively large width of the quasiparticle peak in this distribution function. The coupling of conduction electrons to external magnetic fields is included in the two-band transport equations in the usual semiclassical way. It is shown that the low-temperature Hall number is proportional to delta as well (again for not too large delta) and that it exhibits singular behaviour when the Fermi surface changes from the hole-like shape into the electron-like shape.
机译:双频存储器函数电导率公式源自伪劣铜铜的伪动画状态。通过使用嵌套费米液模型的绝热形式描述传导电子,并且在显着的情况下考虑了MOTT相关性的影响。发现低温有效数量的导通电子在掺杂水平δ(不太大的Delta)上的线性依赖性与实验观察一致。动量分布函数证明在描述温度效应方面发挥着重要作用。在室温的阶段的温度下,反铁磁伪孔的关闭被认为是该分布函数中的Quasiplicle峰的相对大的宽度的直接后果。导通电子与外部磁场的耦合以通常的半透限方式包括在双频传输方程中。结果表明,低温霍尔数量也与δ成比例(再次不是太大的δ),并且当费银表面从空穴形状变为电子样形状时,它表现出奇异的行为。

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