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首页> 外文期刊>The European physical journal, D. Atomic, molecular, and optical physics >Growth dynamics of copper thin film deposited by soft-landing of size selected nanoclustersk
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Growth dynamics of copper thin film deposited by soft-landing of size selected nanoclustersk

机译:铜薄膜的生长动态由精选纳米电器沉积沉积

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摘要

We investigate surface kinetic roughening of copper films grown on Si(1 0 0) substrates at room temperature by means of atomic force microscopy study. Films were deposited at various durations by soft landing of size selected (similar to 3 nm) nanoclusters using a state of the art nanocluster deposition system. The film growth exhibits two growth regimes with a crossover time of 40 min. In the first regime, surface morphologies show bimodal distribution and surface roughness shows a linear increase with growth exponent beta = 0.14 +/- 0.02. In the second regime, the height distribution becomes Gaussian and surface roughness shows a steep rise with high beta value 0.83 +/- 0.45. On the other hand, the roughness exponent alpha ranges from 0.68 +/- 0.03 to 0.84 +/- 0.01 for low to high deposition regimes. Estimated scaling exponent suggests the diffusion of clusters on substrate surface and shadowing effect play dominant role in growth mechanism of the nanostructured thin film.
机译:通过原子力显微学研究,研究在室温下在Si(1 0 0)基质上生长的铜膜的表面动力学粗糙化。 通过使用现有技术的纳米光栅沉积系统的状态(类似于3nm)纳米单元的尺寸的软着陆,在各种持续时间上沉积薄膜。 薄膜生长表现出两种生长制度,交叉时间为40分钟。 在第一个制度中,表面形态显示双峰分布和表面粗糙度显示出生长指数β= 0.14 +/- 0.02的线性增加。 在第二个方案中,高度分布变为高斯,表面粗糙度显示出高β值0.83 +/- 0.45的陡峭升高。 另一方面,粗糙度指数alpha范围为0.68 +/- 0.03至0.84 +/- 0.01,用于低沉积制度。 估计的缩放指数表明簇的扩散在基材表面和阴影效果中起主要作用在纳米结构薄膜的生长机理中起作用。

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