等离子体气相凝聚技术制备铜纳米团簇薄膜的沉积速率研究

摘要

Cu nanocluster films were deposited on substrates through Cu nanocluster beams generated by the plasma gas condensation combining with the differential pum-ping .Effects of sputtering current ,Ar flow rate and aggregation zone length on deposi-tion rate of films were studied .Their microstructures were characterized by X-ray dif-fractometer (XRD) and transmission electron microscope (TEM) .The results show that keeping other process parameters fixed ,the deposition rate of Cu nanocluster films increases gradually and then decreases with the increasing of sputtering current and Ar flow rate .But the effect of aggregation zone length on deposition rate is irregular .All of these results are from the variation of mean free path of Cu nanocluster .Cu nanoclus-ter films consist of nanocluster particles with about several nanometers and have poor crystallinity .%采用等离子体气相凝聚技术并结合差分抽气技术产生铜纳米团簇束流,然后在衬底上沉积铜纳米团簇薄膜,研究了溅射电流、氩气流量和结露区长度对其沉积速率的影响.利用X射线衍射仪和透射电子显微镜对薄膜微结构进行了表征.结果表明:保持其他参数不变的情况下,增加溅射电流和氩气流量,铜纳米团簇薄膜的沉积速率均呈现先增大后减小的趋势,而结露区长度对沉积速率的影响无明显规律,这主要归因于铜纳米团簇粒子的平均自由程变化.铜纳米团簇薄膜主要由粒径约为几纳米的团簇颗粒组成,其结晶程度较低.