首页> 外国专利> ORGANOCOPPER COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM PREPARED BY USING THE SAME

ORGANOCOPPER COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM PREPARED BY USING THE SAME

机译:用于金属有机气相沉积的有机铜化合物和铜薄膜的制备。

摘要

PROBLEM TO BE SOLVED: To obtain an organocopper compound for metal organic chemical vapor deposition, which is readily vaporizable, stably supplied as a raw material in film forming, with which a film-forming speed is improved, a metal organic chemical vapor deposition apparatus is hardly corroded, treatment of exhaust gas in a MOCVD process is not complicated and adhesivity to a substrate film is excellent.;SOLUTION: The organometallic compound for metal organic chemical vapor deposition is represented by general formula (1) or formula (2) (R1 is a methyl group and R2 is an isobutyl group, R1 is a methyl group and R2 is an isopropyl group or R1 is an isobutyl group and R2 is a t-butyl group).;COPYRIGHT: (C)2003,JPO
机译:解决的问题:为了获得易于汽化的,稳定地作为成膜原料的金属有机化学气相沉积用有机铜化合物,从而提高成膜速度,需要一种金属有机化学气相沉积装置。几乎不腐蚀,在MOCVD工艺中处理废气并不复杂,并且对基底膜的粘附性极佳。;解决方案:用于金属有机化学气相沉积的有机金属化合物由通式(1)或通式(2)表示(R 1 是甲基,R 2 是异丁基,R 1 是甲基,R 2 是异丙基或R 1 是异丁基,R 2 是叔丁基).;版权:(C)2003,JPO

著录项

  • 公开/公告号JP2003252823A

    专利类型

  • 公开/公告日2003-09-10

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP20020053412

  • 发明设计人 SAI ATSUSHI;OGI KATSUMI;

    申请日2002-02-28

  • 分类号C07C49/92;C07F1/08;C23C16/18;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-22 00:14:41

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