Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

摘要

Epitaxial films of zinc sulfide on silicon were obtained by atomic layer deposition (ALD). In order to avoid the interaction between silicon and zinc sulfide, a high-quality buffer layer of silicon carbide similar to 100 nm in thickness was previously synthesized on the surface of silicon by chemical substitution of atoms. High-energy electron diffraction showed that ZnS layers are epitaxial. It is proved by ellipsometric methods that the grown ZnS layers are transparent in the photon energy region up to 3 eV, which is crucial for applications in optoelectronics.