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Gap Opening Mechanism at the Dirac Point in the Electronic Spectrum of Gd-Doped Topological Insulator

机译:GD掺杂拓扑绝缘体电子谱中DIRAC点的间隙开启机构

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The electronic structure of magnetically doped topological insulator Bi1.09Gd0.06Sb0.85Te3 is studied in the vicinity of the Dirac point at various temperatures (above and below the Neel temperature, 1-35 K) and synchrotron radiation polarizations using angle-resolved photoelectron spectroscopy. It is shown that the energy gap exists in photoemission spectra at the Dirac point, which remains open above the long-range magnetic ordering temperature T-N. Measurements of magnetic properties by the superconducting magnetometry method show antiferromagnetic ordering with the paramagnetic transition temperature of 8.3 K. The studies of the temperature dependence of the Dirac cone state intensity by photoelectron spectroscopy confirm the existence of the magnetic transition and show the possibility of its indication directly from photoemission spectra. A more detailed analysis of the splitting between states of upper and lower Dirac cones (i.e., the energy gap) at the Dirac point in the photoelectron spectra shows the dependence of the gap at the Dirac point on the synchrotron radiation polarization type (28-30 meV for p-polarization and 22-25 meV for circularly polarized radiation of opposite chirality). The gap opening mechanism at the Dirac point above T-N due to "coupling" of Dirac fermions with opposite momenta and spin orientations due to their interaction with the spin texture formed immediately during photoemission in the region of the photoemission hole at the magnetic impurity atom (Gd). It is shown that the gap at the Dirac point, measured above T-N, is dynamic and is formed immediately during photoemission. In this case, the gap nature remains magnetic (even in the absence of long-range magnetic ordering) and is caused by properties of magnetic topological insulator, which does control the gap invariability when passing through T-N. The dynamic nature of the generated gap is confirmed by its dependence on synchrotron radiation polarization.
机译:在各种温度(上方和低于NEER温度,1-35 k)和使用角度分辨光电子谱的情况下,在DIRAC点(上下和下方和下方的Syschrotron辐射偏振附近的磁掺杂拓扑绝缘体BI1.09GD0.06SB0.85TE3的电子结构。结果表明,在DIRAC点处的光曝光光谱中存在能量隙,其保持在远程磁化温度T-N之上。超导磁体测量磁性的测量结果显示了具有8.3k的顺磁化转变温度的反铁磁性排序。光电子谱的狄拉科锥形强度的温度依赖性的研究证实了磁性过渡的存在并显示了其指示的可能性直接来自光电激发光谱。对光电子谱中的DIRAC点处的上下狄拉科锥体(即,能量间隙)的状态的分裂的更详细分析,示出了间止辐射偏振型下的DIAC点处的间隙(28-30)的依赖性(28-30用于P偏振的MEV和22-25米的圆极化辐射相反的手性辐射)。由于它们与旋转织物的相互作用的“旋转”和旋转方向相反的“耦合”而导致的DIAC点的间隙打开机构,其与磁性杂散原子的光电孔区域的光电孔区域的光电(Gd )。结果表明,在T-N高于T-N的DIAC点处的间隙是动态的,并且在光电过程中立即形成。在这种情况下,间隙性质保持磁性(即使在没有远程磁性排序的情况下)并且是由磁性拓扑绝缘体的性质引起的,当通过T-N时控制间隙不变性。通过其对同步辐射极化的依赖性来证实所产生间隙的动态性质。

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