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Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

机译:反铁磁掺d拓扑绝缘子中的狄拉克间隙开口和狄拉克费米介导的磁耦合及其通过同步加速器辐射的操纵

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摘要

A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs) with stoichiometry Bi1.09Gd0.06Sb0.85Te3 has been studied by angle-resolved photoemission spectroscopy (ARPES), superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD) with analysis of its electronic structure and surface-derived magnetic properties at different temperatures. This TI is characterized by the location of the Dirac gap at the Fermi level (EF) and a bulk AFM coupling below the Neel temperature (4–8 K). At temperatures higher than the bulk AFM/PM transition, a surface magnetic layer is proposed to develop, where the coupling between the magnetic moments located at magnetic impurities (Gd) is mediated by the Topological Surface State (TSS) via surface Dirac-fermion-mediated magnetic coupling. This hypothesis is supported by a gap opening at the Dirac point (DP) indicated by the surface-sensitive ARPES, a weak hysteresis loop measured by SQUID at temperatures between 30 and 100 K, XMCD measurements demonstrating a surface magnetic moment at 70 K and a temperature dependence of the electrical resistance exhibiting a mid-gap semiconducting behavior up to temperatures of 100–130 K, which correlates with the temperature dependence of the surface magnetization and confirms the conclusion that only TSS are located at the EF. The increase of the TSS’s spectral weight during resonant ARPES at a photon energy corresponding to the Gd 4d-4f edge support the hypothesis of a magnetic coupling between the Gd ions via the TSS and corresponding magnetic moment transfer at elevated temperatures. Finally, the observed out-of-plane and in-plane magnetization induced by synchrotron radiation (SR) due to non-equal depopulation of the TSS with opposite momentum, as seen through change in the Dirac gap value and the k∥-shift of the Dirac cone (DC) states, can be an indicator of the modification of the surface magnetic coupling mediated by the TSS.
机译:通过角分辨光发射光谱法(ARPES),超导磁力法(SQUID)和X射线磁性圆二色性研究了一种新型的化学计量比为Bi1.09Gd0.06Sb0.85Te3的磁掺杂反铁磁拓扑绝缘体(TIs)。 (XMCD)分析其在不同温度下的电子结构和表面衍生的磁性。该TI的特征是Dirac间隙位于费米能级(EF)以及在Neel温度(4–8 K)以下的大量AFM耦合。在高于体AFM / PM跃迁的温度下,建议开发一个表面磁性层,其中位于磁性杂质(Gd)上的磁矩之间的耦合由拓扑表面态(TSS)经由表面Dirac-fermion-介导。介导的磁耦合。该假设由表面敏感性ARPES指示的狄拉克点(DP)处的间隙开口,在30至100 K之间的温度下由SQUID测量的弱磁滞回线,XMCD测量表明在70 K时的表面磁矩和电阻的温度依赖性在最高100-130 K的温度下表现出中间能隙的半导体行为,这与表面磁化强度的温度依赖性相关,并证实只有TSS位于EF的结论。在共振ARPES期间,在对应于Gd 4d-4f边缘的光子能量下,TSS的光谱权重增加,支持了通过TSS的Gd离子之间的磁耦合以及在高温下相应的磁矩传递的假设。最后,通过狄拉克(Dirac)间隙值的变化和电子的k the位移可以看出,观察到的同步加速器辐射(SR)引起的面外和面内磁化强度是由于具有相反动量的TSS的不相等分布而引起的。狄拉克锥(DC)状态可以指示由TSS介导的表面磁耦合的改变。

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