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Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi1.09Gd0.06Sb0.85Te3

机译:GD掺杂拓扑绝缘体BI1.09GD0.06SB0.85TE3的磁性和电子性质

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摘要

The recent realization of quantum anomalous Hall effect and Majorana fermions observation enhance interest in magnetism investigation in topological insulators. In this work, the electronic and magnetic structure of the Gd-doped topological insulator Bi1.09Gd0.06Sb0.85Te3 were systematically studied by means of angle-resolved photoemission spectroscopy, resonance photoemission spectroscopy (ResPES) and SQUID magnetometry. Resonant features related to the Gd density of states near the Fermi level are experimentally observed. Study of magnetic structure showed antiferromagnetic ordered bulk at low temperatures as well as presence of hysteresis loop at elevated temperatures. Finally, possible mechanism of magnetism and its relation to observed electronic features are discussed.
机译:最近实现量子异常霍尔效应和Majorana Fermions观察提高拓扑绝缘子磁性调查的兴趣。 在这项工作中,通过角度分辨的光曝光光谱,共振光曝光光谱(呼吸)和鱿鱼磁度测定,系统地研究了GD掺杂拓扑绝缘体BI1.09GD0.06SB0.85Te3的电子和磁性结构。 实验观察到与费米水平附近的状态的GD密度相关的共振特征。 磁性结构的研究在低温下显示了反铁磁性有序体以及升高温度下的滞后环存在。 最后,讨论了磁性的可能机制及其与观察到的电子特征的关系。

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