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Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

机译:关于磁掺杂拓扑绝缘子的电子和磁性特性的相互作用的光谱观点

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摘要

We combine low energy muon spin rotation (LE-μSR) and soft-x-ray angle- resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)_2Te_3.We find that one achieves a full magnetic volume fraction in samples of (V/Cr)_x(Bi,Sb)_(2−x)Te_3 at doping levels x approx> 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering.We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V L3 edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.
机译:我们将低能量μs自旋旋转(LE-μSR)和软X射线角度分辨的光曝光光谱(SX-ARPE)组合以研究磁掺杂拓扑绝缘体的磁性和电子性质,(Bi,Sb)_2te_3.we找到该一个在掺杂水平x约> 0.16的(v / cr)_x(bi,sb)_(2-x)TE_3的样品中,达到全磁体积分数。观察到的磁化过渡在温度下不是急剧,指示逐渐磁化排序。我们发现磁性排序的演变与形成的铁磁性群岛的形成一致,其数量和/或具有降低温度的数量。 V L3边缘处的共振ARPES揭示了靠近FERMI水平的非杂质杂质带以及集成到主带结构中的V重量。 V对光谱函数的v贡献的相干电位近似的计算证实该杂质带是由v在替代位点中的v引起的。讨论了我们对MK温度观察量子异常霍尔效应观察MK温度的影响。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2017年第18期|184402.1-184402.11|共11页
  • 作者单位

    Laboratory for Muon Spin Spectroscopy Paul Scherrer Institute CH-5232 Villigen PSI Switzerland Laboratorium fuer Festkoerperphysik ETH-Hoenggerberg CH- 8093 Zuerich Switzerland;

    Francis Bitter Magnet Lab Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics The Penn State University University Park Pennsylvania 16802 USA;

    Swiss Light Source Paul Scherrer Institute CH-5232 Villigen PSI Switzerland National Institute of Materials Physics Atomistilor 405A 077125 Magurele Romania;

    Swiss Light Source Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

    Institut fuer Theoretische Physik Johannes Kepler Universitaet A 4040 Linz Austria Max-Planck-Institut fuer Mikrostrukturphysik Weinberg 2 06120 Halle Germany;

    Departamento de Fisica de Materiales UPV/EHU Centro de Fisica de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU 20080 San Sebastian/Donostia Spain Tomsk State University pr. Lenina 36 634050 Tomsk Russia;

    Laboratory for Muon Spin Spectroscopy Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

    Swiss Light Source Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

    Laboratory for Muon Spin Spectroscopy Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

    Donostia International Physics Center P. Manuel de Lardizabal 4 San Sebastian 20018 Basque Country Spain Department of Applied Physics Ⅱ Faculty of Science and Technology University of the Basque Country UPV/EHU Apdo. 644 48080 Bilbao Spain;

    Departamento de Fisica de Materiales UPV/EHU Centro de Fisica de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU 20080 San Sebastian/Donostia Spain Donostia International Physics Center P. Manuel de Lardizabal 4 San Sebastian 20018 Basque Country Spain Saint Petersburg State University 198504 Saint Petersburg Russia;

    Francis Bitter Magnet Lab Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA;

    Swiss Light Source Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

    Laboratory for Muon Spin Spectroscopy Paul Scherrer Institute CH-5232 Villigen PSI Switzerland;

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