Numerical analysis of the output waveguide design for 1.55 mu m square microcavity lasers directly grown on GaAs substrates

摘要

We report a structure design of 1.55 mu m square microcavity lasers monolithically integrated on GaAs substrates. The mode characteristics of the microcavity lasers are numerically investigated by three-dimensional finite-difference time-domain method. The dependences of the high-quality factor modes on the side length of the microcavity, the width of the output waveguide and the etching depth are investigated in detail. The results demonstrate, for the microcavity structure with the side length of 12 mu m, the output waveguide width of 1.0 mu m and the etching depth of 3.55 mu m, it is optimal to excite high-quality factor modes around wavelength of 1.55 mu m. The mode wavelength and the mode quality factor are 1547.46 nm and 2416.28, respectively. The quality factor degrades rapidly with the waveguide width increasing, and increases with increasing etching depth.