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Structure and Properties of Silumin Surface after Vacuum Arc Plasma-Assisted Deposition of Coatings Irradiated by Low Energy High Current Pulsed Electron Beam

机译:低能量高电流脉冲电子束照射涂层真空电弧等离子体辅助沉积硅表面的结构与性能

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The paper presents the results of modification of the silumin surface layer using a multicycle processing technique which combines the formation of the film (titanium)-substrate (silumin) system and the low energy high current pulsed electron beam (LEHCPEB) irradiation of submillisecond duration in one cycle. A KOMPLEX plasma-ion-assisted electron-beam setup (Institute of High Current Electronics SB RAS, Tomsk, Russia) is used for silumin treatment. Titanium is used as an alloying element. The thickness of the deposited film is 0.5 mu m in each alloying cycle, the number of which is 1, 5 and 10. Surface alloying includes ion-bombardment cleaning and heating by hot and hollow cathodes of argon plasma discharge, with negative bias voltage supply to the specimen (initial heating up to preset temperature, surface cleaning and activation); plasma-enhanced chemical vapor deposition of metal films (argon is used as a carrier gas); and LEHCPEB irradiation of the film (titanium)-substrate (silumin) system. It is shown that multicycle alloying of the grade AK12 silumin (G-AlSi12, DIN, Germany) with titanium leads to a dissolution of silicon and intermetallic inclusions in the surface layer up to 30 mu m thick, the formation of submicro- and nanocrystalline multiphase structure with the microhardness and wear resistance, which are 1.4 and 14.2 times higher than in cast silumin.
机译:本文介绍了使用多网处理技术改性硅表面层的结果,该技术结合了薄膜(钛)(硅藻)系统的形成和低能量高电流脉冲电子束(LEHCPEB)潜在潜水持续时间的辐射一个周期。用于脱脂处理的Komplex等离子体离子辅助电子束设置(高电流电子SB RAS,Tomsk,Tomsk,Tomsk。钛用作合金元素。沉积膜的厚度在每个合金循环中为0.5μm,其数量为1,5和10.表面合金化包括通过氩等离子体放电的热和中空阴极的离子轰击清洁和加热,具有负偏置电压供应试样(初始加热到预设温度,表面清洁和活化);等离子体增强的金属膜的化学气相沉积(氩气用作载气);和Lehcpeb的膜(钛)辐射 - 溶液(硅藻)系统。结果表明,具有钛的Ak12硅蛋白(G-Alsi12,DIN,德国的G-Alsi12,DIN,德国)的多控合金导致表面层中硅和金属间夹杂物的溶解,高达30μm厚,形成亚晶和纳米晶多相的形成具有微硬度和耐磨性的结构,比铸造硅含量为1.4和14.2倍。

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