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首页> 外文期刊>Solid state ionics >Preparation and ion conduction of Li1.5Al0.5Ge1.5(PO4)(3) solid electrolyte films using radio frequency sputtering
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Preparation and ion conduction of Li1.5Al0.5Ge1.5(PO4)(3) solid electrolyte films using radio frequency sputtering

机译:使用射频溅射的Li1.5Al0.5Ge1.5(PO4)(3)固体电解质膜的制备和离子传导

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摘要

Li1.5Al0.5Ge1.5(PO4)(3) (LAGP) solid electrolyte films are successfully prepared on silicon substrates by radio frequency magnetron sputtering for the first time. X-ray diffraction, energy dispersive spectroscopy, and scanning electron microscopy are used to analyze the composition, structure, and morphology of the LAGP films, respectively. The effects of deposition conditions on the ion transport properties of the LAGP thin films are also evaluated via electrochemical impedance spectroscopy measurements. An evolution from a uniform and smooth amorphous structure to a coarse-grained structure of the surface morphology is observed for the films prepared at different temperatures. The results show that low growth temperature is beneficial to the formation of amorphous LAGP films with smooth surface and uniform thickness, and crystalline films with preferred orientation of (104) crystal plane are successfully deposited when the substrate temperature reaches 500 degrees C. The LAGP amorphous film with a thickness of 1.2 mu m deposited at 200 degrees C exhibits a high ionic conductivity of 1.29 x 10(-6) Scm(-1). The ionic activation energy of the sample is determined to be 0.25 eV based on Arrhenius equation, indicating good ionic conductivity of the LAGP film. The good ionic conductivity of amorphous LAGP is attributed to its open and disordered structure with large excessive volumes.
机译:通过射频磁控管溅射首次在硅基板上成功地制备Li1.5Al0.5Ge1.5(PO4)(3)(LAGP)固体电解质膜。 X射线衍射,能量分散光谱和扫描电子显微镜用于分别分析LAGP薄膜的组成,结构和形态。还通过电化学阻抗光谱测量评估沉积条件对LAGP薄膜离子传输性质的影响。对于在不同温度下制备的薄膜,观察到从均匀和平滑的无定形结构到表面形态的粗粒结构的演变。结果表明,低生长温度有利于形成具有光滑表面和均匀厚度的无定形LAGP薄膜,并且当基板温度达到500摄氏度时,成功沉积具有(104)晶体平面的优选取向的结晶膜。滞后无定形沉积在200摄氏度的厚度为1.2μm的薄膜表现出1.29×10(-6)SCM(-1)的高离子电导率。基于Arrenius方程,确定样品的离子活化能量为0.25eV,表明LAGP膜的良好离子电导率。无定形LAGP的良好离子电导率归因于其开放和无序的结构,具有大量的量。

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