Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications

摘要

Rear side application of polycrystalline silicon (poly-Si) passivated contacts has demonstrated very high efficiencies for single-junction monocrystalline silicon (mono-Si) solar cells. To further improve the device performance, one possible approach is to apply the passivated contact concept to the front side of the solar cell as well. The front side application requires the use of ultra-thin poly-Si layer in order to suppress parasitic absorption. Suitable ex-situ diffusion process should be developed accordingly without damaging the passivation provided by the very thin interface oxide (iO(x)). In this work, we prepared symmetric lifetime samples of ultra-thin poly-Si (<30 nm) via low pressure chemical vapour deposition (LPCVD) method. Then we studied and optimised the ex-situ POCl3/BBr3 diffusion doping processes. An excellent passivation quality was demonstrated with a high implied open-circuit voltage (iV(oc)) of up to 730 mV (on symmetric nthorn poly-Si lifetime samples) and 700 mV (on symmetric p(+) poly-Si lifetime samples). For possible contact formation, we capped the poly-Si with sputter-deposited ZnO:Al, which shows good opto-electrical properties and firing stability at 650 degrees C.