Multilevel Recording in Ge2Sb2Te5 Thin Films

摘要

The current-voltage characteristics measured on Ge2Sb2Te5 thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can be associated with memory-channel expansion. The memory-channel size is estimated. It is concluded that Ge2Sb2Te5 films can be used as memristors.