Chalcogenide Ge2Sb2Te5 thin films have been widely exploited as binary bit recording materials in optical and non-volatile electronic information storage, where the crystalline and amorphous states are marked as the information bits “0” and “1”, respectively. In this work, we demonstrate the use of Ge2Sb2Te5 thin films as multi-level grayscale image recording materials. High-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through taking advantage of laser-induced structural evolution characteristic. Experimental results indicate that the change of laser energy results in the structural evolution of Ge2Sb2Te5 thin films. The structural evolution induces the difference of electronic polarizability and reflectivity, and high-resolution grayscale images are recorded on Ge2Sb2Te5 thin films through direct laser writing method, accordingly.
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机译：硫族化物Ge 2 Sb 2 Te 5薄膜已被广泛用作光学和非易失性电子信息存储中的二进制位记录材料，其中结晶态和非晶态分别标记为信息位“ 0”和“ 1”。在这项工作中，我们演示了将Ge2Sb2Te5薄膜用作多层灰度图像记录材料。利用激光诱导的结构演化特性，在Ge2Sb2Te5薄膜上记录了高分辨率的灰度图像。实验结果表明，激光能量的变化导致了Ge2Sb2Te5薄膜的结构演化。结构的演变引起了电子极化率和反射率的差异，因此通过直接激光写入方法在Ge2Sb2Te5薄膜上记录了高分辨率的灰度图像。
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