Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron (vol 50, pg 1569, 2017)

Surovegina E. A.; Demidov E. V.; Drozdov M. N.; Murel A. V.; Khrykin O. I.; Shashkin V. I.; Lobaev M. A.; Gorbachev A. M.; Viharev A. L.; Bogdanov S. A.; Isaev V. A.; Muchnikov A. B.; Chernov V. V.; Radishchev D. B.; Batler J. E.

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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron (vol 50, pg 1569, 2017)

机译：掺杂硼的外延CVD金刚石层的原子组成和电气特性（Vol 50，PG 1569,2017）

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The name of the last author should read J. E. Batler.

机译：最后作者的名称应该读取J. E. Batler。

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《Semiconductors》 |2017年第8期|共1页
作者
Surovegina E. A.; Demidov E. V.; Drozdov M. N.; Murel A. V.; Khrykin O. I.; Shashkin V. I.; Lobaev M. A.; Gorbachev A. M.; Viharev A. L.; Bogdanov S. A.; Isaev V. A.; Muchnikov A. B.; Chernov V. V.; Radishchev D. B.; Batler J. E.;
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Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 607680 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Appl Phys Nizhnii Novgorod 603950 Russia;

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中图分类半导体物理学;
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1. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron (vol 50, pg 1569, 2017) [J] . Surovegina E. A., Demidov E. V., Drozdov M. N., Semiconductors . 2017,第8期

机译：掺杂硼的外延CVD金刚石层的原子组成和电气特性（Vol 50，PG 1569,2017）
2. Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system [J] . Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Solid-State Electronics . 2009,第8期

机译：超净低压CVD法在B吸附的Si（100）上外延生长Si时重B原子层的掺杂特性
3. Surface damages in diamond by Ar/O_2 plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers [J] . A. Denisenko, A. Romanyuk, C. Pietzka, Journal of Applied Physics . 2010,第7期

机译：Ar / O_2等离子体对金刚石的表面损伤及其对掺硼层电和电化学特性的影响
4. Electrochemical Response of Biomolecules on Carbon Substrates: Comparison between Oxidized HOPG and O-Terminated Boron-Doped CVD Diamond [C] . Claudia Baier, Hadwig Sternschulte, Andrej Denisenko, NATO Advanced Study Institute on Nanotechnological Basis for Advanced Sensors . 2011

机译：碳基材生物分子的电化学响应：氧化啤酒花和O封端硼掺杂CVD金刚石的比较
5. Measurement of thermal conductivity of boron-doped CVD diamond films as a function of electrical resistivity. [D] . Sayers, Andrew. 1996

机译：掺杂硼的CVD金刚石薄膜的热导率随电阻率的变化的测量。
6. The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth [O] . Yun Zhao, Chengming Li, Jinlong Liu, 2019

机译：多层氮掺杂外延生长法制备的CVD单晶金刚石的界面和力学性能
7. Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers [O] . Fernández-Lorenzo, Concepción, Araújo, Daniel, Martín, J., 2010

机译：硼掺杂CVD金刚石外延层中硼受体的氢钝化

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron (vol 50, pg 1569, 2017)

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