High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: II. Energy efficiency

摘要

The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load R (L) is studied for the first time. It is shown that at the given values of the resistive load R (L) , pulse amplitude U (R) and duration t (R) , there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of similar to 0.92. All three switch types feature almost the same efficiency at short t (R) ; at longer t (R) , photothyristors have a noticeable advantage.