Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

摘要

The emission characteristics of narrow mesa-stripe (5.5 mu m) lasers based on asymmetric AlGaAs/GaAs heterostructures are studied. It is shown that the maximum optical power achieved in the continuous-wave (CW) operation mode is limited by heating and reaches a value of 1695 mW at a current of 2350 mA at +25 degrees C, with the maximum efficiency reaching 54.8%. Reducing the working temperature to -8 degrees C makes it possible to raise the maximum low-mode CW power to 2 W. A peak power of 2930 mW is obtained under pumping with current pulses (width 240 ns, amplitude 4230 mA). It is shown that the power profile has in the pulsed mode an "optical dip" region in which low-efficiency lasing occurs with the generation of a train of subnanosecond pulses.