Study of the Effect of Laser Radiation on the Parameters of Alumina Films Formed by Atomic Layer Deposition

摘要

The effect of laser radiation with a wavelength of 970 nm and a power density of 0.29–2.10 W/cm_(2)on the process of atomic layer deposition of alumina films from precursors (trimethylaluminium + water vapor) is studied. Laser irradiation is performed at the stages of reactor purging after the introduction of precursors. The results of a comprehensive analysis involving spectral ellipsometry, atomic force microscopy, X-ray diffractometry, and secondary-ion mass spectrometry have revealed that laser irradiation (i) does not alter the rate of deposition of alumina films onto silicon slices; (ii) does not alter the surface relief (roughness) of alumina films; (iii) does not alter the depth profile of the chemical composition of alumina films; (iv) reduces the average density of irradiated regions of alumina films by 5–10% relative to the density of nonirradiated regions.