A modified low-pressure chemical vapor deposition method was proposed to fabricate large-grain single-crystal few-layer graphene domains with distinctive layers by introducing an assembly to the conventional chemical vapor deposition. It was found that the fabricated single-crystal few-layer graphene domains consist of one-to five-layer graphene areas exhibiting layer growth characteristics. Moreover, the first three layers grew by Bernal stacking while the fourth and fifth layers could take on Bernal stacking or turbostratic stacking depending on the magnitude of the stress at the nucleation site. The results implied that the formation of few-layer graphene of good quality was beneficial from the modified low-pressure chemical vapor deposition system because not only could the assembly provide a stable growth condition for the graphene, but it could also accelerate the generation of gaseous activated vapor carbon atoms, which guaranteed the nucleation and growth of few-layer graphene. Furthermore, the growth mechanism of few-layer graphene was analysed.
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