Structural Characterization of Si_(1-x)Ge_x Ultrathin Quantum Wells in a Si Matrix by High-Resolution X-ray Diffraction

A. M. Afanasev; M. A. Chuev; R. M. Imamov; E. Kh. Mukhamedzhanov; M. M. Rzaev; F. Schaffler; M. Muehlberger

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Structural Characterization of Si_(1-x)Ge_x Ultrathin Quantum Wells in a Si Matrix by High-Resolution X-ray Diffraction

机译：高分辨X射线衍射在Si基体中Si_（1-x）Ge_x超薄量子阱的结构表征

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The structural characteristics of silicon samples containing one and two Si_(1-x)Ge_x/Si quantum wells 1.8 to 15 nm thick were determined by high-resolution X-ray diffraction. A detailed analysis of X-ray rocking curves made it possible to reproduce the Ge-concentration profiles in the quantum wells. The diffusion of germanium (up to 20%) into interface layers was observed, with a consequent broadening of the quantum well interfaces.

机译：通过高分辨率X射线衍射测定包含1.8至15nm厚的一个和两个Si_（1-x）Ge_x / Si量子阱的硅样品的结构特征。通过对X射线摇摆曲线的详细分析，可以再现量子阱中的Ge浓度分布。观察到锗（最多20％）扩散到界面层中，从而扩大了量子阱界面。

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《Crystallography reports》 |2002年第1期|共5页
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A. M. Afanasev; M. A. Chuev; R. M. Imamov; E. Kh. Mukhamedzhanov; M. M. Rzaev; F. Schaffler; M. Muehlberger;
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1. Structural Characterization of Si_(1-x)Ge_x Ultrathin Quantum Wells in a Si Matrix by High-Resolution X-ray Diffraction [J] . A. M. Afanasev, M. A. Chuev, R. M. Imamov, Crystallography reports . 2002,第Suppla1期

机译：高分辨X射线衍射在Si基体中Si_（1-x）Ge_x超薄量子阱的结构表征
2. Characterization of Si_(1-x)Ge_x/Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations [J] . G. Bhagavannarayana, S. K. Haider Journal of Applied Physics . 2005,第2期

机译：Si_（1-x）Ge_x / Si层的表征及其异质双极晶体管结构的深度轮廓通过高分辨率x射线衍射法和计算机模拟
3. Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_x Layer Epitaxied on Si Substrate [J] . Lei ZHAO, Yuhua ZUO, Buwen CHENG Journal of Materials Science & Technology . 2006,第5期

机译：双晶X射线衍射和显微拉曼测量在成分确定在硅衬底上高Ge含量的Si_（1-x）Ge_x层的比较中的比较
4. Photoluminescence and X-ray characterisation of Si/Si_(1-x)Ge_x multiple quantum wells [C] . T. P. Sidiki, A. Ruhm, W.-X. Ni, Symposium B on light emission from silicon : Progress towards Si-based optoelectronics of the E-MRS conference . 1999

机译：Si / Si_（1-x）Ge_x多量子阱的光致发光和X射线表征
5. An X-ray diffraction investigation of lanthanum(1-x) strontium(x) manganite (x = 0.55) and lanthanum(1-x) barium(x) manganite (x = 0.5, 0.52) under an applied magnetic field. [D] . Hoffmann, Christopher Alan. 2010

机译：在外加磁场下对镧（1-x）锶（x）锰（x = 0.55）和镧（1-x）钡（x）锰（x = 0.5，0.52）的X射线衍射研究。
6. Structural investigation of the covalent and electrostatic binding of yeast cytochrome c to the surface of various ultrathin lipid multilayers using x-ray diffraction. [O] . J M Pachence, J K Blasie 1991

机译：使用X射线衍射对酵母细胞色素c与各种超薄脂质多层膜表面的共价和静电结合进行结构研究。
7. Caracterização estrutural por difração de raios X de alta resolução de SiAlONs sinterizados com diferentes aditivos Structural characterization by high-resolution X-ray diffraction of SiAlONs sintered with different additives [O] . C. Santos, P. A. Suzuki, K. Strecker, 2005

机译：用不同添加剂烧结的SiAlONs的高分辨率X射线衍射进行结构表征
8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Structural Characterization of Si_(1-x)Ge_x Ultrathin Quantum Wells in a Si Matrix by High-Resolution X-ray Diffraction

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