...
首页> 外文期刊>Microsystem technologies >High quality factor RF MEMS tunable capacitor
【24h】

High quality factor RF MEMS tunable capacitor

机译:高品质因子RF MEMS可调电容器

获取原文
获取原文并翻译 | 示例

摘要

This paper presents the design of a tunable capacitor that integrates two vertical comb-drive tunable capacitors and a parallel plate tunable capacitor. The parallel plate tunable capacitor is in the middle of the comb-drive tunable capacitors. The vertical comb-drive part has sets of fixed and moving fingers while the parallel plate has fixed and moving plates. The capacitor is fabricated using the MetalMUMPs microfabrication process, which has only one thick structural layer i.e. metal (20 mu m nickel and 0.5 mu m gold). The nickel of the metal layer is subject to residual stress gradients along its thickness. After release of the metal layer, the stress gradients bend the curve-up beams to raise the moving fingers and the moving plate of the capacitor above the substrate and the fixed plate. Hence, one structural layer (i.e. the metal) is used to form the moving and the fixed comb fingers without requiring two structural layers. Vertical comb-driven tunable capacitors offer high capacitance density when a large number of fingers with narrow gap are used. Therefore, high capacitance ratio and high quality factors can be achieved by using vertical comb-drives with in a relatively small device area compared to lateral comb-drives. The parallel plate driving part increases the displacement and capacitance ratio while reducing the actuation voltage required for driving the capacitor. The quality factor and tuning ratio of the fabricated tunable capacitor are 118.5 and 101% at 0.8 GHz; respectively at a driving voltage of 100 V. Based on the experimental results of the fabricated tunable capacitor, an optimized design is presented for both high tuning ratio and high quality factor. The tuning ratio of the optimized capacitor is found to be 143.1% at a "pull-in" displacement of 9.5 A mu m and a "pull-in" voltage of 90 V. The quality factors of the optimized capacitor are 520 at 0 V and 363.5 at 90 V, respectively at 0.8 GHz. The tunable capacitor achieves a displacement of more than one-half of the gap between the parallel plates without "pull-in" effect.
机译:本文介绍了可调谐电容的设计,可集成两个垂直梳式可调电容器和平行板可调电容器。平行板可调电容位于梳状可调电容器的中间。垂直梳状驱动部分具有一组固定和移动的指状物,而平行板具有固定和移动板。电容器使用Metalmumps微型加工方法制造,其仅具有一个厚的结构层I.E.金属(20μm镍和0.5μm金)。金属层的镍沿其厚度受到残余应力梯度。在释放金属层之后,应力梯度弯曲曲线梁以升高基板上方的电容器和固定板的移动指状物和移动板。因此,一种结构层(即金属)用于形成移动和固定的梳状指示而不需要两个结构层。当使用具有窄间隙的大量手指时,垂直梳理可调谐电容器提供高电容密度。因此,与横向梳状梳状物相比,通过使用相对小的装置区域中的垂直梳状驱动,可以实现高电容比和高质量因素。平行板驱动部分增加位移和电容比,同时减小驱动电容器所需的致动电压。制造的可调电容器的质量因数和调谐比率为0.8GHz的118.5和101%;分别在100V的驱动电压下。基于制造的可调电容器的实验结果,提出了优化的设计,用于高调谐比和高质量因子。优化电容的调谐比率在9.5 a mu m的“拉入”位移处为143.1%,并“拉入”电压为90 V。优化电容器的质量因子为520 v和363.5分别为90 v,分别为0.8 GHz。可调谐电容器达到平行板之间的间隙的一半以上的位移,而没有“拉入”效果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号