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An electrostatic tunable RF MEMS capacitor with improved quality factor

机译:具有改善的品质因数的静电可调RF MEMS电容器

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A new micromachined varactor for the RF applications is proposed. Electrostatic actuation is chosen for the varactor because of the simplicity of the fabrication and low power consumption. The varactor is composed of two sets of actuation plates. The flip-flop structure of the varactor makes is possible to increase or decrease the capacitance, which results in a higher tuning range. One of the other advantages of this flipflop structure is the elimination of the pull-in effect. The proposed varactor has the tuning range of 139% and quality factor of 40 at the frequency of 1GHz. The operating voltage for the varactor is 2v which is in the range of CMOS circuits. The narrow beams of the MEMS varactor which introduce large series resistance are eliminated by dividing the bottom plate of the capacitor into two plates, which in turn causes the varactor to show better quality factor.
机译:提出了一种用于射频应用的新型微机械变容二极管。由于制造的简单性和低功耗,因此为变容二极管选择了静电致动。变容二极管由两组致动板组成。变容二极管的触发器结构使得可以增加或减小电容,从而导致更高的调谐范围。这种触发器结构的另一个优点之一是消除了拉入效应。所提出的变容二极管在1GHz的频率下具有139%的调谐范围和40的品质因数。变容二极管的工作电压为2v,在CMOS电路范围内。通过将电容器的底板分成两块板,可以消除引入大串联电阻的MEMS变容二极管的窄束,从而使变容二极管显示出更好的品质因数。

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